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• W2077143414 endingPage "1206" @default.
• W2077143414 startingPage "1202" @default.
• W2077143414 abstract "The oxidation of hydrogen-terminated porous silicon surfaces produced by electrochemical etching has been studied using transmission FTIR spectroscopy. The surface is passivated to oxidation by surface hydrogen below about 523 K. Above this temperature as hydrogen depletion occurs by H2 evolution, Si surface dangling bond sites, capable of O2 dissociation, are involved in initiating the first stage of oxidation. Two reactions are observed. The first, O insertion into Si−Si back-bonds, leads to −OySiHx surface species which exhibit frequency shifts to the blue compared to parent SiHx stretching modes. In addition, Si−O−Si modes are also observed to form. The second reaction involves oxygen atom insertion into Si−H bonds to produce isolated Si−OH surface species." @default.
• W2077143414 created "2016-06-24" @default.
• W2077143414 creator A5040150200 @default.
• W2077143414 creator A5066151576 @default.
• W2077143414 creator A5085027351 @default.
• W2077143414 date "1997-02-01" @default.
• W2077143414 modified "2023-10-16" @default.
• W2077143414 title "FTIR Study of the Oxidation of Porous Silicon" @default.
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• W2077143414 doi "https://doi.org/10.1021/jp963322r" @default.
• W2077143414 hasPublicationYear "1997" @default.
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