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- W2077164014 abstract "Mask defectivity is often highlighted as one of the barriers to a manufacturable EUV solution. As EUV lithography matures, other components of mask making also emerge as key focus areas in the industry: critical dimension (CD) control, film variability, selectivity, and profile tolerance. Mask materials and specifications continue to evolve to meet the unique challenges of EUV lithography, creating the need for etch capabilities that can keep pace with the latest developments. In this study, the performance of a new EUV mask etch system will be evaluated using a variety of mask blanks to determine the relative performance of each blank type. Etch contributions to mean to target (MTT), CDU, linearity, selectivity, capping layer uniformity, line edge roughness (LER), and profile quality will be characterized to determine tool performance. The new system will also be used to demonstrate multilayer etching capabilities, important for opaque frame and alternating phase shift applications. A comprehensive summary of the etch performance of various EUV films and the readiness for manufacturing applications will be provided." @default.
- W2077164014 created "2016-06-24" @default.
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- W2077164014 date "2011-10-06" @default.
- W2077164014 modified "2023-09-27" @default.
- W2077164014 title "Dry etching performance of advanced EUV mask blanks" @default.
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- W2077164014 doi "https://doi.org/10.1117/12.898815" @default.
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