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• W2077228977 abstract "Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (Je)Si=150 μA/cm2 (under 23.6 V/μm) and turn on field of (Eo)Si=10 V/μm. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (Je)Au/Si=960 μA/cm2 (under 23.6 V/μm) with (Eo)Au/Si=10 V/μm. The effective work functions (φ) estimated by Fowler–Nordheim plots of the I–V characteristics are (φ)Si=0.059 eV and (φ)Au/Si=0.085 eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays." @default.
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• W2077228977 date "1997-07-28" @default.
• W2077228977 modified "2023-09-23" @default.
• W2077228977 title "Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process" @default.
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• W2077228977 doi "https://doi.org/10.1063/1.119607" @default.
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