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- W2077248664 abstract "Abstract Chemical lift-off of (11–22) semipolar GaN using triangular cavities was investigated. The (11–22) semipolar GaN was grown using epitaxial lateral overgrowth by metal-organic chemical vapor deposition on m-plane sapphire, in such a way as to keep N terminated surface of c-plane GaN exposed in the cavities. After regrowing 300 μm thick (11–22) semipolar GaN by hydride vapor phase epitaxy for a free-standing (11–22) semipolar GaN substrate, the triangular cavities of the templates were chemically etched in molten KOH. The (000-2) plane in the triangular cavities can be etched in the [0002] direction with the high lateral etching rate of 196 μm/min. The resulting free-standing (11–22) semipolar GaN substrate was confirmed to be strain-free by the Raman analysis." @default.
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- W2077248664 date "2012-01-01" @default.
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- W2077248664 title "Chemical lift-off of (11–22) semipolar GaN using periodic triangular cavities" @default.
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- W2077248664 doi "https://doi.org/10.1016/j.jcrysgro.2011.11.014" @default.
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