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• W2077252890 abstract "We report deep level transient spectroscopy (DLTS) studies of glow discharge hydrogenated amorphous silicon (aSi:H) by which we observe directly energy levels in the pseudogap of this material. Our technique uses both optical excitation from a tunable pulsed dye laser as well as classical voltage pulse trap filling to create thermally stimulated current and capacitance transients from gap states located in the space charge layer of Schottky barriers formed on these samples. Unlike field effect and related capacitance-voltage measurements of MOS structures, these data can be interpreted without a detailed knowledge of the functional dependence of band bending inthe depletion region. We observe both electron and hole emission and are furthermore able to identify these as emission processes occuring from true bulk levels in the material. From this we deduce a detailed picture of the bulk density of states for our n-type doped aSi:H samples. We find the spectral distribution to be considerably different from that deduced by previous methods and the overall densities to be much lower. We discuss inherent advantages of DLTS techniques over other measurements as well as the limitations to the applicability of our methods." @default.
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• W2077252890 date "1980-11-01" @default.
• W2077252890 modified "2023-09-25" @default.
• W2077252890 title "Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy" @default.
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• W2077252890 doi "https://doi.org/10.1016/0379-6787(80)90036-8" @default.
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