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- W2077286670 abstract "n - Zn O ∕ Si O x ∕ n - Si and n-ZnO∕SiOx∕p-Si heterostructured light-emitting diodes have been fabricated using metal-organic chemical-vapor deposition for a comparison study. n-ZnO∕SiOx∕p-Si heterostructures show diodelike rectifying current-voltage characteristic with low breakdown voltage, while n-ZnO∕SiOx∕n-Si heterostructures show symmetric nonlinear current-voltage behavior due to the double Schottky barriers at the interface. Both types of diodes emit light when a positive bias applied at Si side. Ultraviolet emission at ∼390nm with an orange-emission centered at ∼600nm were observed in electroluminescence spectra of n-ZnO∕SiOx∕n-Si diodes, while whitish emission centered at ∼520nm was observed for n-ZnO∕SiOx∕p-Si diodes. The emission mechanisms were discussed." @default.
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- W2077286670 date "2008-07-07" @default.
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- W2077286670 title "Ultraviolet and visible electroluminescence from n-ZnO∕SiOx∕(n,p)-Si heterostructured light-emitting diodes" @default.
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- W2077286670 doi "https://doi.org/10.1063/1.2957465" @default.
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