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- W2077320310 abstract "ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTEvidence for inversion layer formation at the p-type gallium arsenide/persulfate solution interface under strong cathodic bias: electroluminescence caused by carrier injectionKohei Uosaki and Hideaki KitaCite this: J. Phys. Chem. 1984, 88, 19, 4197–4199Publication Date (Print):September 1, 1984Publication History Published online1 May 2002Published inissue 1 September 1984https://doi.org/10.1021/j150663a002RIGHTS & PERMISSIONSArticle Views62Altmetric-Citations9LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (289 KB) Get e-Alerts" @default.
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- W2077320310 title "Evidence for inversion layer formation at the p-type gallium arsenide/persulfate solution interface under strong cathodic bias: electroluminescence caused by carrier injection" @default.
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