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• W2077366984 startingPage "348" @default.
• W2077366984 abstract "The etching mechanism of ZrO2 thin films in BCl3/Ar plasma was investigated using a combination of experimental and modeling methods. It was found that an increase in the Ar mixing ratio causes the non-monotonic behavior of the ZrO2 etch rate which reaches a maximum of 41.4 nm/min at about 30–35% Ar. Langmuir probe measurements and plasma modeling indicated the noticeable influence of a BCl3/Ar mixture composition on plasma parameters and active species kinetics that results in non-linear changes of both densities and fluxes for Cl, BCl2 and BCl2+. From the model-based analysis of surface kinetics, it was shown that the non-monotonic behavior of the ZrO2 etch rate can be associated with the concurrence of chemical and physical pathways in ion-assisted chemical reaction." @default.
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• W2077366984 date "2008-02-01" @default.
• W2077366984 modified "2023-10-14" @default.
• W2077366984 title "On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma" @default.
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• W2077366984 doi "https://doi.org/10.1016/j.mee.2007.07.009" @default.
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