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• W2077374023 abstract "Silicon etching by-products play a major role in silicon gate etching processes because they are the precursors to SiOClX passivation layer formation on feature sidewalls and on reactor walls. As a result, the understanding and modelling of these processes relies on the knowledge of the absolute value of SiClX (SiBrX) fluxes to the surfaces exposed to the plasma. However, only a few experimental data on the absolute concentration of SiClX etch byproducts are available in the literature. In this work, we show that broad band UV absorption spectroscopy can be used to measure the absolute densities of SiClX (X = 0–2), SiFX (X = 1–2) and SiO species, as well as to detect SiBr molecules. In addition, a new absorption spectrum has been observed and attributed to the SiClF radical. We have used a state of the art silicon gate etching process operating in a low pressure high density HBr/Cl2/O2/CF4 plasma etching a 200 mm diameter silicon wafer to produce the different radicals." @default.
• W2077374023 created "2016-06-24" @default.
• W2077374023 creator A5000189425 @default.
• W2077374023 creator A5031006945 @default.
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• W2077374023 date "2004-07-01" @default.
• W2077374023 modified "2023-10-17" @default.
• W2077374023 title "Identification of halogen containing radicals in silicon etching plasmas and density measurement by UV broad band absorption spectroscopy" @default.
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• W2077374023 doi "https://doi.org/10.1088/0022-3727/37/14/010" @default.
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