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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2077497809> ?p ?o ?g. }

• W2077497809 endingPage "794" @default.
• W2077497809 startingPage "788" @default.
• W2077497809 abstract "We investigated the effect of body thickness on the electrical performance of GaSb double-gate ultrathin-body (DG-UTB) MOSFET by examining the band structure of the 12- (~2 nm), 24- (~4 nm), 36- (~6 nm), and 48- (~8 nm) atomic-layer (AL) thick GaSb. Two different surface orientations, namely, (100) and (111), were studied. sp <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sup> d <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> s <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>*</sup> tight-binding model is used to calculate the band structures of GaSb MOSFET. Ballistic transport was studied using the semiclassical top-of-barrier model with applied self-consistent real-space potential across the body. First, we found that for (100) surface orientation, GaSb DG-UTB FET with body thickness of 24 ALs offered relatively larger ON-state current for various gate dielectric materials studied. However, for (111) surface orientation, 12 ALs GaSb DG-UTB FET showed the best performance due to its reasonably higher injection velocity and larger electron density. Furthermore, for the FET with a body thickness of 48 ALs and HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> dielectric, it was observed that the charge occupations shift toward the surface, unlike the cases of FETs with thinner body, leading to the formation of inversion charge on the surface. Finally, we compared the ON-state current of GaSb DG-UTB FET with different channel surface orientations and found that (100) surface generally outperforms (111) surface in terms of ON-state current." @default.
• W2077497809 created "2016-06-24" @default.
• W2077497809 creator A5000688694 @default.
• W2077497809 creator A5011558214 @default.
• W2077497809 creator A5022882528 @default.
• W2077497809 creator A5024709912 @default.
• W2077497809 creator A5025542675 @default.
• W2077497809 creator A5043641656 @default.
• W2077497809 date "2015-03-01" @default.
• W2077497809 modified "2023-09-24" @default.
• W2077497809 title "Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor" @default.
• W2077497809 cites W1479826191 @default.
• W2077497809 cites W1970118450 @default.
• W2077497809 cites W1984772856 @default.
• W2077497809 cites W1986783084 @default.
• W2077497809 cites W2002325465 @default.
• W2077497809 cites W2003497255 @default.
• W2077497809 cites W2014938702 @default.
• W2077497809 cites W2022079892 @default.
• W2077497809 cites W2036981974 @default.
• W2077497809 cites W2042559563 @default.
• W2077497809 cites W2047582756 @default.
• W2077497809 cites W2058896981 @default.
• W2077497809 cites W2068407087 @default.
• W2077497809 cites W2082993491 @default.
• W2077497809 cites W2086658993 @default.
• W2077497809 cites W2088544295 @default.
• W2077497809 cites W2098874598 @default.
• W2077497809 cites W2109987276 @default.
• W2077497809 cites W2110526637 @default.
• W2077497809 cites W2122622148 @default.
• W2077497809 cites W2135650105 @default.
• W2077497809 cites W2137580778 @default.
• W2077497809 cites W2149796940 @default.
• W2077497809 cites W2167457950 @default.
• W2077497809 cites W2171568783 @default.
• W2077497809 cites W2230379230 @default.
• W2077497809 cites W2539857790 @default.
• W2077497809 cites W2542250099 @default.
• W2077497809 doi "https://doi.org/10.1109/ted.2014.2387194" @default.
• W2077497809 hasPublicationYear "2015" @default.
• W2077497809 type Work @default.
• W2077497809 sameAs 2077497809 @default.
• W2077497809 citedByCount "8" @default.
• W2077497809 countsByYear W20774978092017 @default.
• W2077497809 countsByYear W20774978092018 @default.
• W2077497809 countsByYear W20774978092019 @default.
• W2077497809 countsByYear W20774978092020 @default.
• W2077497809 countsByYear W20774978092021 @default.
• W2077497809 countsByYear W20774978092023 @default.
• W2077497809 crossrefType "journal-article" @default.
• W2077497809 hasAuthorship W2077497809A5000688694 @default.
• W2077497809 hasAuthorship W2077497809A5011558214 @default.
• W2077497809 hasAuthorship W2077497809A5022882528 @default.
• W2077497809 hasAuthorship W2077497809A5024709912 @default.
• W2077497809 hasAuthorship W2077497809A5025542675 @default.
• W2077497809 hasAuthorship W2077497809A5043641656 @default.
• W2077497809 hasConcept C119599485 @default.
• W2077497809 hasConcept C127162648 @default.
• W2077497809 hasConcept C127413603 @default.
• W2077497809 hasConcept C131017901 @default.
• W2077497809 hasConcept C165801399 @default.
• W2077497809 hasConcept C172385210 @default.
• W2077497809 hasConcept C192562407 @default.
• W2077497809 hasConcept C2778413303 @default.
• W2077497809 hasConcept C3019885731 @default.
• W2077497809 hasConcept C49040817 @default.
• W2077497809 hasConceptScore W2077497809C119599485 @default.
• W2077497809 hasConceptScore W2077497809C127162648 @default.
• W2077497809 hasConceptScore W2077497809C127413603 @default.
• W2077497809 hasConceptScore W2077497809C131017901 @default.
• W2077497809 hasConceptScore W2077497809C165801399 @default.
• W2077497809 hasConceptScore W2077497809C172385210 @default.
• W2077497809 hasConceptScore W2077497809C192562407 @default.
• W2077497809 hasConceptScore W2077497809C2778413303 @default.
• W2077497809 hasConceptScore W2077497809C3019885731 @default.
• W2077497809 hasConceptScore W2077497809C49040817 @default.
• W2077497809 hasFunder F4320320709 @default.
• W2077497809 hasIssue "3" @default.
• W2077497809 hasLocation W20774978091 @default.
• W2077497809 hasOpenAccess W2077497809 @default.
• W2077497809 hasPrimaryLocation W20774978091 @default.
• W2077497809 hasRelatedWork W1500216205 @default.
• W2077497809 hasRelatedWork W2020631194 @default.
• W2077497809 hasRelatedWork W2051944710 @default.
• W2077497809 hasRelatedWork W2077377534 @default.
• W2077497809 hasRelatedWork W2113258421 @default.
• W2077497809 hasRelatedWork W2137040991 @default.
• W2077497809 hasRelatedWork W2168635756 @default.
• W2077497809 hasRelatedWork W3081846810 @default.
• W2077497809 hasRelatedWork W4253838303 @default.
• W2077497809 hasRelatedWork W4306405909 @default.
• W2077497809 hasVolume "62" @default.
• W2077497809 isParatext "false" @default.
• W2077497809 isRetracted "false" @default.
• W2077497809 magId "2077497809" @default.
• W2077497809 workType "article" @default.