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• W2077528868 abstract "Thin films of silver and germanium have been grown on Si(111) surfaces using direct deposition from low energy ion beams of these materials in ultra-high vacuum. For both systems, ion deposition leads to epitaxial growth of the thin films at temperatures lower than those normally encountered in evaporation growth experiments. Measurements of the energy-dependent sticking probability of the ions on the growing thin films have been performed in the kinetic energy ranges 25–125 eV for Ag+ and 25–300 eV for Ge+. The sticking probability drops from near unity at the lowest energies to near zero at the higher energies. Simulation of the growth process using computer simulations with the MARLOWE program indicates that the drop is correlated with the increasing self-sputtering of the film, and it is proposed that the present measurements can be used as a measurement of the self- sputtering coefficient of these materials at low energies. Using the results of the same computer simulations, the mechanism of ion deposition thin film growth (ion beam epiplantation) is discussed." @default.
• W2077528868 created "2016-06-24" @default.
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• W2077528868 date "1982-02-01" @default.
• W2077528868 modified "2023-10-18" @default.
• W2077528868 title "Ion beam epiplantation" @default.
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• W2077528868 doi "https://doi.org/10.1016/0022-0248(82)90039-2" @default.
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