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• W2077641862 abstract "We introduce a polymer transistor that operates with low supply voltage and yet has a field-effect mobility higher than the mobilities reported for low voltage polymer transistors. A simple plasma oxidation of the gate metal to form a thin (3.74 nm) top metal oxide layer in the gate metal is involved in the fabrication that acts as the gate dielectric. With ultrathin gate dielectrics, the variation in the dielectric thickness and the surface roughness scattering can severely limit the mobility attainable. The plasma oxidation under certain conditions produces a very smooth oxide surface, leading to the high mobility." @default.
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• W2077641862 date "2007-08-01" @default.
• W2077641862 modified "2023-09-26" @default.
• W2077641862 title "High mobility, low voltage polymer transistor" @default.
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• W2077641862 doi "https://doi.org/10.1016/j.orgel.2007.03.004" @default.
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