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• W2077653682 abstract "Rectangular cross-sectional GaN optical waveguides were formed on sapphire substrates by using a new selective-growth technique. We optically pumped the selectively grown GaN waveguides using the 355 nm line of the third harmonic generation of a YAG laser and made the emission light resonate between Fabry-Perot mirror facets fabricated by cleaving the substrate. The peak intensity at 362 nm emitted from a cleaved facet of the waveguide was superlinearly intensified at 77 K as a function of the excitation power density. When the power density increased, the emission peak exhibited line narrowing with the full-width at half maximum of the peak decreasing from 11 to 1.8 nm at an input power density of 0.047 MW/cm2. A red shift to longer wavelengths was also generated at intervals of an integral magnification of the individual longitudinal-mode spacing. These results imply that an optically pumped stimulated emission can be intensified by resonating the guided light in a selectively grown optical waveguide between Fabry-Perot mirror facets. Based on our selective-growth technique, we can design the selectively grown buried-heterostructure (BH) optical waveguides to achieve stable wave-guiding of the fundamental transverse mode. We discuss the wave-guiding conditions for the fundamental mode using the relationship between the thickness and the maximum width of the active layer. We also estimated the two-dimensional distribution of the near-field optical intensity calculated by the beam propagation method in a BH optical waveguide to confirm cut-off conditions of the higher-order transverse mode. The stripe width in a BH optical waveguide can be widened by lowering the difference in the refractive index between the active layer and the cladding layers in the vertical and lateral directions. It is expected that widening the BH stripe will make the fabrication process easier and allow higher output power to be guided. To design such a BH optical waveguide with a wider active-layer stripe, we propose an impurity-doped active layer and/or a superlattice-structure cladding layer, both of which are effective in lowering the difference in the refractive index between the active and the cladding layers." @default.
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• W2077653682 date "1997-02-01" @default.
• W2077653682 modified "2023-10-14" @default.
• W2077653682 title "Stimulated emission from rectangular cross-sectional GaN optical waveguides by photo-pumping and stripe design of optical waveguides formed with a selectively grown buried heterostructure" @default.
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• W2077653682 doi "https://doi.org/10.1016/s0038-1101(96)00212-2" @default.
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