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• W2077687065 endingPage "3288" @default.
• W2077687065 startingPage "3285" @default.
• W2077687065 abstract "Pure single-phase m- and a-plane GaN layers were fabricated on (1 0 0)- and (3 0 2)-planes of γ-LiAlO2 (LAO) substrate via metelorganic vapor deposition, respectively. Raman spectra measurement indicates that the crystallinity gradually improves with increasing layer thickness, and smaller stress exists in an a-GaN film. (3 0 2)-Plane LAO appears suitable for fabricating high-quality a-GaN layers because the layer on it shows a smoother surface with the root mean square of 60 nm, higher transmittance (85%) and narrower full-width at half-maximum value (FWHM) of X-ray rocking curve (1123 arcsec) than m-GaN on (1 0 0)-plane LAO (1735 arcsec)." @default.
• W2077687065 created "2016-06-24" @default.
• W2077687065 creator A5013189655 @default.
• W2077687065 creator A5086732170 @default.
• W2077687065 date "2009-06-01" @default.
• W2077687065 modified "2023-09-26" @default.
• W2077687065 title "Nonpolar m- and a-plane GaN thin films grown on γ-LiAlO2 substrates" @default.
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• W2077687065 doi "https://doi.org/10.1016/j.jcrysgro.2009.03.015" @default.
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