Matches in SemOpenAlex for { <https://semopenalex.org/work/W2077721572> ?p ?o ?g. }
Showing items 1 to 87 of
87
with 100 items per page.
- W2077721572 endingPage "804" @default.
- W2077721572 startingPage "800" @default.
- W2077721572 abstract "The 20-nm-thick Si cap layer/74-nm-thick Si0.72Ge0.28 epilayer/Si heterostructures implanted by 25 keV H+ ion to a dose of 1×1016 cm−2 were annealed in ultra-high vacuum ambient and dry O2 ambient at the temperature of 800 °C for 30 min, respectively. Rutherford backscattering/ion channeling (RBS/C), Raman spectra, high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) were used to characterize the structural characteristics of the Si0.72Ge0.28 layer. Investigations by RBS/C demonstrated that the crystal quality of the Si/Si0.72Ge0.28/Si heterostructure sample implanted by 25 keV H+ in conjunction with subsequent annealing in dry O2 ambient is superior to that of identical sample annealing in ultra-high vacuum ambient. The less strain relaxation of SiGe layer of the Si/Si0.72Ge0.28/Si heterostructures implanted by H ion and annealed in dry O2 ambient at the temperature of 800 °C for 30 min could be doublechecked by Raman spectra as well as HRXRD, which was compared with that in an identical sample annealed in ultra-high vacuum ambient for identical thermal budget. In addition, the SiGe layer of the H-implanted Si/SiGe/Si heterostructural sample annealed in dry O2 ambient accompanied by better crystal quality and less strain relaxation made its surface morphology superior to that of the sample annealed in ultra-high vacuum ambient at the temperature of 800 °C for 30 min, which was also verified by AFM images." @default.
- W2077721572 created "2016-06-24" @default.
- W2077721572 creator A5066220678 @default.
- W2077721572 creator A5076569001 @default.
- W2077721572 creator A5084024507 @default.
- W2077721572 creator A5085925550 @default.
- W2077721572 date "2007-06-01" @default.
- W2077721572 modified "2023-09-25" @default.
- W2077721572 title "Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient" @default.
- W2077721572 cites W1508005014 @default.
- W2077721572 cites W1969929506 @default.
- W2077721572 cites W1969950458 @default.
- W2077721572 cites W1971404541 @default.
- W2077721572 cites W1999457869 @default.
- W2077721572 cites W2011783599 @default.
- W2077721572 cites W2017082188 @default.
- W2077721572 cites W2021684974 @default.
- W2077721572 cites W2032611807 @default.
- W2077721572 cites W2033249677 @default.
- W2077721572 cites W2034581813 @default.
- W2077721572 cites W2035569596 @default.
- W2077721572 cites W2051024068 @default.
- W2077721572 cites W2062022071 @default.
- W2077721572 cites W2068058426 @default.
- W2077721572 cites W2078601402 @default.
- W2077721572 cites W2088224385 @default.
- W2077721572 cites W2092954369 @default.
- W2077721572 cites W2094979504 @default.
- W2077721572 cites W2139151287 @default.
- W2077721572 cites W2324193161 @default.
- W2077721572 doi "https://doi.org/10.1016/j.mejo.2007.04.002" @default.
- W2077721572 hasPublicationYear "2007" @default.
- W2077721572 type Work @default.
- W2077721572 sameAs 2077721572 @default.
- W2077721572 citedByCount "0" @default.
- W2077721572 crossrefType "journal-article" @default.
- W2077721572 hasAuthorship W2077721572A5066220678 @default.
- W2077721572 hasAuthorship W2077721572A5076569001 @default.
- W2077721572 hasAuthorship W2077721572A5084024507 @default.
- W2077721572 hasAuthorship W2077721572A5085925550 @default.
- W2077721572 hasConcept C113196181 @default.
- W2077721572 hasConcept C120665830 @default.
- W2077721572 hasConcept C121332964 @default.
- W2077721572 hasConcept C159985019 @default.
- W2077721572 hasConcept C171250308 @default.
- W2077721572 hasConcept C185592680 @default.
- W2077721572 hasConcept C192562407 @default.
- W2077721572 hasConcept C2777855556 @default.
- W2077721572 hasConcept C40003534 @default.
- W2077721572 hasConcept C43617362 @default.
- W2077721572 hasConcept C49040817 @default.
- W2077721572 hasConcept C79794668 @default.
- W2077721572 hasConcept C82225425 @default.
- W2077721572 hasConceptScore W2077721572C113196181 @default.
- W2077721572 hasConceptScore W2077721572C120665830 @default.
- W2077721572 hasConceptScore W2077721572C121332964 @default.
- W2077721572 hasConceptScore W2077721572C159985019 @default.
- W2077721572 hasConceptScore W2077721572C171250308 @default.
- W2077721572 hasConceptScore W2077721572C185592680 @default.
- W2077721572 hasConceptScore W2077721572C192562407 @default.
- W2077721572 hasConceptScore W2077721572C2777855556 @default.
- W2077721572 hasConceptScore W2077721572C40003534 @default.
- W2077721572 hasConceptScore W2077721572C43617362 @default.
- W2077721572 hasConceptScore W2077721572C49040817 @default.
- W2077721572 hasConceptScore W2077721572C79794668 @default.
- W2077721572 hasConceptScore W2077721572C82225425 @default.
- W2077721572 hasIssue "6-7" @default.
- W2077721572 hasLocation W20777215721 @default.
- W2077721572 hasOpenAccess W2077721572 @default.
- W2077721572 hasPrimaryLocation W20777215721 @default.
- W2077721572 hasRelatedWork W2058676402 @default.
- W2077721572 hasRelatedWork W2094497370 @default.
- W2077721572 hasRelatedWork W2173710209 @default.
- W2077721572 hasRelatedWork W2274769052 @default.
- W2077721572 hasRelatedWork W2966115702 @default.
- W2077721572 hasRelatedWork W2974640969 @default.
- W2077721572 hasRelatedWork W3084091181 @default.
- W2077721572 hasRelatedWork W3122401925 @default.
- W2077721572 hasRelatedWork W3196600710 @default.
- W2077721572 hasRelatedWork W4205510562 @default.
- W2077721572 hasVolume "38" @default.
- W2077721572 isParatext "false" @default.
- W2077721572 isRetracted "false" @default.
- W2077721572 magId "2077721572" @default.
- W2077721572 workType "article" @default.