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• W2077751567 endingPage "1768" @default.
• W2077751567 startingPage "1754" @default.
• W2077751567 abstract "The physics of minority-carrier injection into polysilicon-contacted emitters has been studied through a series of experiments correlating the base current of the transistor to the structure of the polysilicon/single-crystal silicon interface. Most of the relevant material and processing parameters have been examined. In addition, a novel approach has been taken in the modeling of transport in these emitters to quantify the minority-carrier blocking properties of the polysilicon contacts. Experimental results show that extremely low values of base current can be obtained for devices etched in HF prior to the polysilicon deposition, i.e., devices with only a remnant native oxide layer at the polysilicon/single-crystal silicon interface. For these devices, the base current is mainly determined by the recombination and blocking of minority carriers at the polysilicon/monosilicon interface. A number of competing mechanisms exist in several domains of doping, temperature, and time which influence the properties of this interface. One of these mechanisms is the blocking of minority carriers by the native oxide layer itself. The uniformity and, consequently, the blocking characteristics of this layer were found to be strongly affected by the polysilicon doping level and thermal treatment." @default.
• W2077751567 created "2016-06-24" @default.
• W2077751567 creator A5000639734 @default.
• W2077751567 creator A5034923844 @default.
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• W2077751567 date "1986-11-01" @default.
• W2077751567 modified "2023-10-06" @default.
• W2077751567 title "Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors" @default.
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• W2077751567 doi "https://doi.org/10.1109/t-ed.1986.22738" @default.
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