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- W2077770122 abstract "For photovoltaic applications, low-cost SiNx-coated metallurgical grade silicon (MG-Si) wafers were used as substrates for polycrystalline silicon (poly-Si) thick films deposition at temperatures ranging from 640 to 880 °C by thermal chemical vapor deposition. X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 °C. To obtain n-type poly-Si, the as-deposited poly-Si films were annealed at 880 °C capped with a phosphosilicate glass. Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements. The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 × 1019 cm−3 and 68.1 cm2 V−1 s−1, respectively. High-quality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications." @default.
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- W2077770122 date "2015-01-01" @default.
- W2077770122 modified "2023-09-26" @default.
- W2077770122 title "n-type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates" @default.
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- W2077770122 doi "https://doi.org/10.1016/j.jmst.2014.04.012" @default.
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