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• W2077804848 abstract "The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscattering spectroscopy of partially reacted samples. When a Ta layer is deposited at the Si/Ti interface, a new intermediate phase has been detected, i.e. the hexagonal TiSi2 C40. This phase grows on the C40–TaSi2 that is formed at the interface with silicon. The lattice parameters of the C40–TiSi2 obtained by ab initio calculations agree quite well with the experimental ones." @default.
• W2077804848 created "2016-06-24" @default.
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• W2077804848 date "2001-03-26" @default.
• W2077804848 modified "2023-09-26" @default.
• W2077804848 title "Formation of the TiSi2 C40 as an intermediate phase during the reaction of the Si/Ta/Ti system" @default.
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• W2077804848 doi "https://doi.org/10.1063/1.1359142" @default.
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