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• W2077841063 abstract "InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.28 to 2.50 V. The peak power conversion efficiency (PCE) occurred at the 100-sun conditions, where the PV cells maintained the fill factor as high as 0.70 and exhibited a PCE of 2.23%. The results showed great potential of InGaN alloys for future high concentration photovoltaic applications." @default.
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• W2077841063 date "2011-05-18" @default.
• W2077841063 modified "2023-09-23" @default.
• W2077841063 title "Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration" @default.
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• W2077841063 doi "https://doi.org/10.1364/oe.19.00a695" @default.
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