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- W2077875661 endingPage "04DP15" @default.
- W2077875661 startingPage "04DP15" @default.
- W2077875661 abstract "Cross-sectional cathodoluminescence (CL) measurements were applied to the study of electron-irradiated punch-through insulated gate bipolar transistors (IGBTs) to investigate the relationship between radiative recombination centers and electrical characteristics. IGBTs were additionally annealed at temperatures of 200–400 °C for 1 h. As annealing temperature rose, collector–emitter saturation voltage ( V CES ) decreased and current fall time ( t f ) increased. The cross-sectional CL measurements showed sharp luminescent peaks at 1018 meV ( W or I 1), 1040 meV ( X or I 3), and 790 meV ( C ) and a broad band at approximately 0.90–1.05 eV. As annealing temperature rose, the intensity of the W line decreased and that of the X line increased, suggesting that small self-interstitial clusters agglomerate and form stable, large self-interstitial clusters reducing the total number of self-interstitial clusters. The C line, which originated from an interstitial oxygen and carbon complex, showed no significant change. We consider that self-interstitial clusters play important roles in the electrical characteristics of lifetime-controlled IGBTs." @default.
- W2077875661 created "2016-06-24" @default.
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- W2077875661 date "2010-04-01" @default.
- W2077875661 modified "2023-09-26" @default.
- W2077875661 title "Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors" @default.
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- W2077875661 doi "https://doi.org/10.1143/jjap.49.04dp15" @default.
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