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- W2077886345 abstract "Copper decoration followed by transmission electron microscopy (TEM) observation is proposed for identifying defects in the buried oxides of silicon‐on‐insulator (SOI) substrates. This method comprises Si surface layer etching (i.e., exposure of the buried‐oxide surface), oxide‐defect location detection with copper decoration, and sample thinning for TEM observation and analysis. The advantage of copper decoration is that the electronic current needed for defect detection is very small, so the influence of the electronic current on the original oxide‐defect structure can be minimized. Defects observed are categorized into four groups from the viewpoint of size and shape." @default.
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- W2077886345 date "1996-07-01" @default.
- W2077886345 modified "2023-09-25" @default.
- W2077886345 title "Copper Decoration Followed by TEM Observation Identifying Defects in the Buried Oxides of SOI Substrates" @default.
- W2077886345 doi "https://doi.org/10.1149/1.1837007" @default.
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