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- W2077955442 abstract "The oxidation-induced Ge condensation of SiGe/Si-on-insulator structures was investigated. The relaxation rate of SiGe on insulator (SGOI) abruptly decreased with SiGe thickness below 50 nm. To enhance the relaxation rate in ultra thin SGOI, a new technique combined with intermediate-dose H+ implantation (5×1015 cm-2) and post annealing (1200 °C) was developed. It was demonstrated that highly relaxed (70%) ultra thin SGOI with a low defect density (<106 cm-2) is realized by this technique." @default.
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- W2077955442 date "2006-04-25" @default.
- W2077955442 modified "2023-10-18" @default.
- W2077955442 title "Improved Oxidation-Induced Ge Condensation Technique Using H+Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator" @default.
- W2077955442 doi "https://doi.org/10.1143/jjap.45.3147" @default.
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