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- W2077964467 abstract "A study has been made of the surface chemistry of Si and SiO2 subjected to dry etching. The surface contamination layer was about 20–30 Å thick as determined by SIMS and AES sputter profile analyses. XPS data indicate that SiO2 surfaces are less contaminated with F and C than is Si, because the oxygen atoms disassociated from the SiO2 surface play a part in the removal of residual carbon. Annealing at over 600°C removed the F and C surface contaminations and the sheet resistivity was restored to the original value." @default.
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- W2077964467 date "1979-07-01" @default.
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- W2077964467 title "A study of dry etching-related contaminations on Si and SiO" @default.
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