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• W2077967962 abstract "Solution-processed inorganic field-effect transistors (FETs) are mostly composed of nanocrystalline semiconductors as active layers. Since carriers are induced at the interface between the nanocrystalline semiconductor and the dielectric, the roughness at the interface has a significant influence on the performance of the FETs. The interface is, however, buried in the nanocrystalline layer and cannot be accessed from the surface; no quantitative probing methods are available so far. In this article, it is proposed to apply capacitance–voltage (C–V) measurements on nanoparticulate capacitors to examine the interface roughness, which enables us to evaluate the correlation between the interface roughness and the performance of nanoparticulate zinc oxide (ZnO) FETs." @default.
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• W2077967962 date "2010-06-09" @default.
• W2077967962 modified "2023-09-25" @default.
• W2077967962 title "Application of capacitance-voltage measurements to the determination of interface roughness in nanoparticulate field-effect transistors" @default.
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• W2077967962 doi "https://doi.org/10.1002/pssa.200983737" @default.
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