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- W2077971565 abstract "The formation and evolution of Si nuclei on the Si(100) surface at 600 and 700 °C were observed in a microwave electron cyclotron resonance plasma chemical vapor deposition system, using both real-time in situ single wavelength and spectroscopic ellipsometry combined with high-resolution cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. The deposited Si layers are epitaxial, and decidedly different nucleation behavior is seen at 600 and 700 °C. The experimental ellipsometry results were compared with simulations and the results show that temperature has a profound effect on the initial nucleation and growth, and the different interface structures that are observed are attributable to impurities." @default.
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- W2077971565 date "1995-01-01" @default.
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- W2077971565 title "Ellipsometry study of the nucleation of Si epitaxy by electron cyclotron resonance plasma chemical vapor deposition" @default.
- W2077971565 doi "https://doi.org/10.1116/1.588000" @default.
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