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- W2077983872 abstract "Abstract Previously it has been suggested on theoretical grounds and early data on N-doped In 1− x Ga x P that at the point of degeneracy of the Γ band edge and the N-trap ( x ≡ x N ) the electron-hole recombination probability associated with the trap is resonantly enhanced by the presence of Γ band states. Data are presented on N-doped and N-free In 1− x Ga x P 1− z As z / GaAs 1− y P y ( x ∼ 0.70, y ≈ 0.40, z ∼ 0.01) single heterojunction laser diodes fabricated on the same VPE GaAs 1− y P y :N system, where the position of the N trap is well known, indicate that the N trap weakens the band-to-band (Γ) transition and is not itself enhanced beyond the usual band structure enhancement (BSE) described recently for ternary alloys. A theoretical argument is offered to explain the discrepancy between earlier theory and experimental observations." @default.
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- W2077983872 date "1975-02-01" @default.
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- W2077983872 title "Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)" @default.
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