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- W2078008001 abstract "The thermal oxidation of silicon is controlled by impurities, most likely Na and/or OH (as originating from H2O or H2). The latter is the main participant under very clean conditions. In situ cleaning, oxidation, and annealing of silicon results in a SiSiO2 interface that is essentially free of surface states and shows no interface instability effects. Some of the impurities responsible for the oxide growth also contribute to ion migration through the oxide under bias at elevated temperature. The extent of this ion migration is generally very small for specimens processed by this in situ technique. Die thermische Oxydation von Silizium wird von Verunreinigungen, sehr wahrscheinlich Na und/oder OH-Gruppen (von H2O oder H2 herrührend), bestimmt. Die OH-Gruppe ist unter sehr reinen Bedingungen hauptsächlich vertreten. In-situ-Säubern, Oxydieren und Glühen des Siliziums führt zu einer SiSiO2 Grenzfläche, die nahezu frei ist von Oberflächenzuständen und keine Grenzflächeninstabilitäten zeigt. Einige der Verunreinigungen, die verantwortlich für die Oxydation sind, tragen auch zur Ionenwanderung durch das Oxyd unter angelegter Spannung und höheren Temperaturen bei. Das Ausmaß der Ionenwanderung ist im allgemeinen sehr gering für Proben, welche nach der in-situ-Methode hergestellt werden." @default.
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- W2078008001 date "1967-01-01" @default.
- W2078008001 modified "2023-09-26" @default.
- W2078008001 title "Thermal Oxidation of Silicon: Growth Mechanism and Interface Properties" @default.
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- W2078008001 doi "https://doi.org/10.1002/pssb.19670190122" @default.
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