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- W2078022005 abstract "Implementation of a novel high-density plasma configuration has led to high etch rates of various opto-electronic device structures. The etch rate for multiple quantum well GaN/GaInN structures exceeds 7500A/min, and that for AlGaInP/GaInP structure is over 4.5 micron/min with near-vertical profile. Discussion will cover the analysis of the etch-rate, micro- morphology, etch-profile and selectivity with respect to the influence by various process parameters. Deep-etch for over 20 microns with photoresist as the protection layer has been achieved, which resulted in nearly 90-degree profile." @default.
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- W2078022005 date "2000-07-11" @default.
- W2078022005 modified "2023-09-23" @default.
- W2078022005 title "Etch of gallium nitride and other III-IV materials using a novel high-density plasma configuration" @default.
- W2078022005 doi "https://doi.org/10.1117/12.392123" @default.
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