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• W2078048794 endingPage "384" @default.
• W2078048794 startingPage "381" @default.
• W2078048794 abstract "Thin films of poly-Si on low cost substrates such as glass are attractive for thin film solar cells and other large-area electronic devices. The controlled and reproducible preparation of polycrystalline silicon thin films by aluminium-induced crystallisation (AIC) needs optimization of both the process of crystallisation and the deposition conditions of the precursor silicon and aluminium layers. In this work, the influence of the hydrogen concentration in the precursor amorphous silicon layer and the deposition temperature of the aluminium layer on the structural properties of poly-Si thin films obtained by AIC of un-hydrogenated (a-Si) and hydrogenated amorphous silicon films (a-Si:H) are studied. Stacks of glass/a-Si:H/Al were prepared for performing the AIC process. The aluminium and amorphous silicon films are deposited by rf magnetron sputtering. The hydrogen concentration in the a-Si:H films is varied from 0 to 18 at.%. The substrate temperature during a-Si (a-Si:H) deposition is kept constant at 250 °C. The Al film is deposited on top of the a-Si (a-Si:H). The deposition temperature of the aluminium films (TSAl) is varied from room temperature (RT) to 500 °C. The samples are isothermally annealed in air at Tan = 530 °C for 7 h. The structural properties of the poly-Si films are studied by Raman spectroscopy and optical microscopy. The results indicate that the hydrogen concentration in the precursor a-Si:H is a very important parameter. It is also observed that TSAl influences the structural properties of the poly-Si films. It is found that films with better crystalline structure are obtained when the a-Si:H precursor layers contain 9 at.% hydrogen and the aluminium deposition temperature is about 350 °C." @default.
• W2078048794 created "2016-06-24" @default.
• W2078048794 creator A5039526414 @default.
• W2078048794 creator A5040749592 @default.
• W2078048794 creator A5055021194 @default.
• W2078048794 creator A5072518377 @default.
• W2078048794 date "2006-07-01" @default.
• W2078048794 modified "2023-09-25" @default.
• W2078048794 title "Influence of the precursor materials on the process of aluminium induced crystallisation of a-Si and a-Si:H" @default.
• W2078048794 cites W1540487540 @default.
• W2078048794 cites W1970819373 @default.
• W2078048794 cites W1980110400 @default.
• W2078048794 cites W1989287696 @default.
• W2078048794 cites W2003707658 @default.
• W2078048794 cites W2011797882 @default.
• W2078048794 cites W2014443797 @default.
• W2078048794 cites W2015914669 @default.
• W2078048794 cites W2017604975 @default.
• W2078048794 cites W2026686905 @default.
• W2078048794 cites W2026764919 @default.
• W2078048794 cites W2064724201 @default.
• W2078048794 cites W2074104878 @default.
• W2078048794 cites W2092969997 @default.
• W2078048794 doi "https://doi.org/10.1016/j.tsf.2005.12.140" @default.
• W2078048794 hasPublicationYear "2006" @default.
• W2078048794 type Work @default.
• W2078048794 sameAs 2078048794 @default.
• W2078048794 citedByCount "7" @default.
• W2078048794 countsByYear W20780487942012 @default.
• W2078048794 countsByYear W20780487942014 @default.
• W2078048794 countsByYear W20780487942020 @default.
• W2078048794 crossrefType "journal-article" @default.
• W2078048794 hasAuthorship W2078048794A5039526414 @default.
• W2078048794 hasAuthorship W2078048794A5040749592 @default.
• W2078048794 hasAuthorship W2078048794A5055021194 @default.
• W2078048794 hasAuthorship W2078048794A5072518377 @default.
• W2078048794 hasConcept C111368507 @default.
• W2078048794 hasConcept C113196181 @default.
• W2078048794 hasConcept C120665830 @default.
• W2078048794 hasConcept C121332964 @default.
• W2078048794 hasConcept C127313418 @default.
• W2078048794 hasConcept C127413603 @default.
• W2078048794 hasConcept C159985019 @default.
• W2078048794 hasConcept C171250308 @default.
• W2078048794 hasConcept C178790620 @default.
• W2078048794 hasConcept C185592680 @default.
• W2078048794 hasConcept C19067145 @default.
• W2078048794 hasConcept C191897082 @default.
• W2078048794 hasConcept C192562407 @default.
• W2078048794 hasConcept C203036418 @default.
• W2078048794 hasConcept C22423302 @default.
• W2078048794 hasConcept C2776390347 @default.
• W2078048794 hasConcept C2777289219 @default.
• W2078048794 hasConcept C2779227376 @default.
• W2078048794 hasConcept C2779667780 @default.
• W2078048794 hasConcept C40003534 @default.
• W2078048794 hasConcept C42360764 @default.
• W2078048794 hasConcept C513153333 @default.
• W2078048794 hasConcept C544956773 @default.
• W2078048794 hasConcept C56052488 @default.
• W2078048794 hasConcept C61427134 @default.
• W2078048794 hasConcept C8010536 @default.
• W2078048794 hasConceptScore W2078048794C111368507 @default.
• W2078048794 hasConceptScore W2078048794C113196181 @default.
• W2078048794 hasConceptScore W2078048794C120665830 @default.
• W2078048794 hasConceptScore W2078048794C121332964 @default.
• W2078048794 hasConceptScore W2078048794C127313418 @default.
• W2078048794 hasConceptScore W2078048794C127413603 @default.
• W2078048794 hasConceptScore W2078048794C159985019 @default.
• W2078048794 hasConceptScore W2078048794C171250308 @default.
• W2078048794 hasConceptScore W2078048794C178790620 @default.
• W2078048794 hasConceptScore W2078048794C185592680 @default.
• W2078048794 hasConceptScore W2078048794C19067145 @default.
• W2078048794 hasConceptScore W2078048794C191897082 @default.
• W2078048794 hasConceptScore W2078048794C192562407 @default.
• W2078048794 hasConceptScore W2078048794C203036418 @default.
• W2078048794 hasConceptScore W2078048794C22423302 @default.
• W2078048794 hasConceptScore W2078048794C2776390347 @default.
• W2078048794 hasConceptScore W2078048794C2777289219 @default.
• W2078048794 hasConceptScore W2078048794C2779227376 @default.
• W2078048794 hasConceptScore W2078048794C2779667780 @default.
• W2078048794 hasConceptScore W2078048794C40003534 @default.
• W2078048794 hasConceptScore W2078048794C42360764 @default.
• W2078048794 hasConceptScore W2078048794C513153333 @default.
• W2078048794 hasConceptScore W2078048794C544956773 @default.
• W2078048794 hasConceptScore W2078048794C56052488 @default.
• W2078048794 hasConceptScore W2078048794C61427134 @default.
• W2078048794 hasConceptScore W2078048794C8010536 @default.
• W2078048794 hasLocation W20780487941 @default.
• W2078048794 hasOpenAccess W2078048794 @default.
• W2078048794 hasPrimaryLocation W20780487941 @default.
• W2078048794 hasRelatedWork W1966810442 @default.
• W2078048794 hasRelatedWork W2013783467 @default.
• W2078048794 hasRelatedWork W2061728122 @default.
• W2078048794 hasRelatedWork W2083321254 @default.
• W2078048794 hasRelatedWork W2086741567 @default.
• W2078048794 hasRelatedWork W2086744665 @default.
• W2078048794 hasRelatedWork W2361873638 @default.

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