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- W2078049288 abstract "Results of Hall, photoluminescence and photocapacitance measurements performed on GaAs layers grown by liquid-phase epitaxy (LPE) and doped with various amounts of indium (In) and antimony (Sb) are presented. Hall measurements show that such doping marginally enhances the mobility in a certain optimum doping range. Near-band-edge photoluminescence spectra indicate the presence of CAs and SiAs as major acceptor impurities in lightly In-doped material. The latter impurity is not detected in heavily In-doped GaAs layers or in Sb-doped layers with either low and high doping density. Photocapacitance measurements reveal the presence of hole traps A and B, reported previously in undoped LPE GaAs. Indium doping reduces the total density of these traps. Furthermore, Sb doping induces a very sharp fall in the density of trap B. The results indicate that the hole trap B may be related to a GaAs antisite defect." @default.
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- W2078049288 date "1994-09-01" @default.
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- W2078049288 title "A photoluminescence and photocapacitance study of GaAs:In and GaAs:Sb layers grown by liquid-phase epitaxy" @default.
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- W2078049288 doi "https://doi.org/10.1088/0268-1242/9/9/012" @default.
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