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• W2078091319 abstract "The effect of RF (13.56 MHz) enhancement in a DC magnetron sputtering process was studied using a one-turn coil above a tin-doped indium oxide (ITO) target. The minimum operating pressure or the minimum operating voltage was reduced to less than one-half by the assistance of RF plasma. The processing plasma was characterized quantitatively in terms of plasma potential ( V p ), floating potential ( V f ), electron density ( N e ), and electron temperature ( T e ) using a Langmuir probe. The probe measurements were also verified using optical emission spectroscopy. V p and V f increased with increasing RF coil power ( P c ) and were strongly dependent on the target voltage. N e increased from 3.7×10 8 /cm 3 at P c =10 W to 1.3×10 9 /cm 3 at P c =50 W at a target voltage of -200 V. At the target voltage of -300 V, N e increased slightly from 1.0×10 9 /cm 3 at P c =10 W to 1.2×10 9 /cm 3 at P c =50 W, whereas T e showed almost no dependence on the RF coil power. T e was strongly dependent on the target voltage, being significantly higher at -200 V as compared to -300 V. The crystallinity of the deposited ITO films was found to increase with increasing RF coil power." @default.
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• W2078091319 date "1998-11-01" @default.
• W2078091319 modified "2023-10-14" @default.
• W2078091319 title "Characterization of RF-Enhanced DC Sputtering to Deposit Tin-Doped Indium Oxide Thin Films" @default.
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• W2078091319 doi "https://doi.org/10.1143/jjap.37.6210" @default.
• W2078091319 hasPublicationYear "1998" @default.
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