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• W2078112492 abstract "Electron cyclotron resonance reactive ion etching (ECR-RIE) conditions for GaN using CH 4 /H 2 /Ar are investigated. GaN can be etched even with continuous etching using CH 4 /H 2 /Ar when Ar gas of a higher flow rate is introduced, but only rough etched surfaces are obtained. A cyclic injection method using CH 4 /H 2 /Ar etching gas and O 2 ashing with constant Ar flow is introduced for GaN etching for the first time, and a rather high etch rate and very smooth etched surfaces are successfully obtained. The cyclic injection of CH 4 /H 2 and O 2 prevents deposition of carbon polymers by oxygen plasma, and constant Ar flow removes the surface oxidized layer formed during the O 2 ashing by Ar + ion etching. Under the optimized etching condition, an etch rate of 34 nm/min and a good morphology of etched surfaces (rms of less than 1.0 nm) are obtained." @default.
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• W2078112492 date "2005-07-01" @default.
• W2078112492 modified "2023-10-14" @default.
• W2078112492 title "Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2with Constant Ar Flow" @default.
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• W2078112492 doi "https://doi.org/10.1143/jjap.44.5819" @default.
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