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• W2078149675 abstract "Ag overlayers were grown on ZnSe(100) by thermal evaporation and by a new approach using partially ionized beams. For the latter, ensuremath{sim}4% of the atoms were ionized and accelerated to an energy of 300--400 eV, thus making it possible to vary the amount of surface disruption. Interface evolution was monitored with photoemission and low-energy electron diffraction. No disruption of the ZnSe surface was found for thermal evaporation, and three-dimensional growth was observed. For ion deposition, three-dimensional growth was again observed, but there was clear evidence of substrate disruption. Parallel measurements of band-bending changes show that the barrier height is the same to within 100 meV for neutral-atom and ion deposition, despite differences in interface morphology." @default.
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• W2078149675 date "1990-01-15" @default.
• W2078149675 modified "2023-09-26" @default.
• W2078149675 title "Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky-barrier formation" @default.
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• W2078149675 doi "https://doi.org/10.1103/physrevb.41.991" @default.
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