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- W2078163939 abstract "Abstract The aim of one present investigation is to determine the influence of both pressure and cavity depth on the mechanical Q-factor for electrostatically excited and capacitively detected encapsulated microresonators. In this paper, we present vibration Q-factor results for bulk-micromachined resonator structures in silicon which have been anodically bonded to glass lids of different recess depths. The parameters investigated are the air pressure, extending from 0.1 to 1000 mbar, and the distance between the resonator structures and the glass-lid wall, ranging from 15 to 45 μm. Another structure without a glass lid has also been tested and is used as a reference. The measurements are performed inside a vacuum chamber. We also present results on low-pressure encapsulated resonators. The structures are excited electrostatically with an external electrode, while the detection is achieved optically by a He/Ne laser combined with a lateral photodetector. The measurements show that the resonator vibration damping is dominated by ‘squeeze-film’ damping for small recess depths (15 μm or less) and that a pressure below 1 mbar is needed to achieved Q-factor of more than 3000. We present a theoretical model for the squeeze-film Q-factor which takes into account both the pressure and the recess-depth parameters. This model matches very well with the measurements. For the first time, a pressure of 1 mbar has been demonstrated inside a low-pressure encapsulated resonator, starting from a bonding pressure of 10−4 mbar, without using any getter material or gas evacuation after the bonding process." @default.
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- W2078163939 date "1997-06-01" @default.
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- W2078163939 title "Gas damping of electrostatically excited resonators" @default.
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- W2078163939 doi "https://doi.org/10.1016/s0924-4247(97)80270-1" @default.
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