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- W2078171310 abstract "Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current." @default.
- W2078171310 created "2016-06-24" @default.
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- W2078171310 date "2014-03-30" @default.
- W2078171310 modified "2023-09-26" @default.
- W2078171310 title "Fabrication and Characterization of Free-Standing DBR Porous Silicon Film" @default.
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- W2078171310 doi "https://doi.org/10.13160/ricns.2014.7.1.1" @default.
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