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• W2078172026 startingPage "241" @default.
• W2078172026 abstract "Thin polycrystalline ZnO films were obtained by thermal oxidation of metallic Zn films, thermally deposited on various substrates, such as silica, sapphire and glass, in both air and pure oxygen atmospheres. The quality of the ZnO layers was asserted by Hall effect, cathodoluminescence and atomic force microscopy measurements. Electron concentration of 7.32×1012 cm−3 and mobility of 14.2 cm2/V s with root mean square roughness of 30 nm were obtained for the 900 °C annealed ZnO films in oxygen. Room temperature cathodoluminescence spectra consisted of a narrow near band edge luminescence band and a broad defect-related green band with peak positions at 380 and 500 nm, respectively. ZnO film luminescence properties improved dramatically with the increase of annealing temperature and decrease of O2 pressure." @default.
• W2078172026 created "2016-06-24" @default.
• W2078172026 creator A5025512304 @default.
• W2078172026 creator A5052669132 @default.
• W2078172026 creator A5053311450 @default.
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• W2078172026 date "2005-02-01" @default.
• W2078172026 modified "2023-09-23" @default.
• W2078172026 title "Thin polycrystalline zinc oxide films obtained by oxidation of metallic zinc films" @default.
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• W2078172026 doi "https://doi.org/10.1016/j.tsf.2004.07.068" @default.
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