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- W2078201422 abstract "By combining the capacitance and conductance analysis techniques, we obtained the D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> distribution throughout the band gap of In <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</inf> As capacitors with H <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O-based and O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> -based ALD oxides. The choice of appropriate temperature to obtain the quasi-static C-V and the DC voltage sweep rate is an essential for the correct extraction of D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> . Simultaneously we obtained the trap kinetics characteristics. We claim that: (i) the H <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O-based ALD deposition results in a fewer traps in the lower portion of In <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</inf> As band gap, (ii) is related to the formation of the thicker native oxide in the O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> -based samples; (iii) the mid gap traps in the H <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O-based samples are significantly slower than those in the O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> -based samples, which indicate their different nature." @default.
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- W2078201422 date "2011-06-01" @default.
- W2078201422 modified "2023-09-23" @default.
- W2078201422 title "Interface states at high- к /InGaAs interface: H<inf>2</inf>O vs. O<inf>3</inf> based ALD dielectric" @default.
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- W2078201422 doi "https://doi.org/10.1109/drc.2011.5994443" @default.
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