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- W2078241459 abstract "Inversion charge ( Q i ) and oxide capacitance ( C ox ') of undoped (or lightly doped) or doped double-gate (DG) and surrounding-gate (SG) metal–oxide–semiconductor field-effect transistors (MOSFETs) with long channel were analytically modeled by considering inversion-layer capacitance ( C i ) in linear region. The Q i model of DG and SG MOSFETs was derived with a closed-form as a function of gate bias ( V GS ), threshold voltage ( V th ), and body structure factor ( n ) using one-dimensional (1D) Poisson's equation considering the mobile carrier. The n which reflects silicon body structure effect is 1 for DG MOSFETs and less than 1 for SG MOSFETs irrespective of channel doping ( N b ). From the derived Q i model considering the C i effect, the C ox ' was modeled and applied to the I D – V GS model of undoped or doped DG and SG MOSFETs in linear region. The compact current model using our proposed C ox ' predicted more accurately the on-current behavior than that with the oxide capacitance ( C ox ) in linear region." @default.
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- W2078241459 date "2010-10-01" @default.
- W2078241459 modified "2023-09-26" @default.
- W2078241459 title "Analytic Oxide Capacitance Model of Double- and Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance" @default.
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- W2078241459 doi "https://doi.org/10.1143/jjap.49.104201" @default.
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