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• W2078251979 abstract "Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p0 or 2p± states of the P and Bi Coulomb centers, and the gain was determined for the 2p0→1s(E), 2p0→1s(T2) transitions in Si:P and the 2p±→1s(E) transition in Si:Bi. Pumping with a CO2 laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p0→1s(T2) of Si:P transition. The gain for intracenter pumping is in the range 5−10 cm−1 while for photoexcitation the gain is considerably less, namely ∼0.5 cm−1. The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations." @default.
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• W2078251979 date "2007-11-01" @default.
• W2078251979 modified "2023-10-16" @default.
• W2078251979 title "Terahertz gain on shallow donor transitions in silicon" @default.
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• W2078251979 doi "https://doi.org/10.1063/1.2804756" @default.
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