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- W2078265561 abstract "A photoelectrochemical (PEC) process was developed to remove the irregular top layer from InP porous nanostructures. After anodic formation of a nanopore array, the PEC process repeated in the same electrolyte under illumination. The etching rate of the pore surfaces was strongly associated with their structural properties, being greater in the irregular top layer. The irregular top layer was completely removed by monitoring and controlling the anodic photocurrents in the ramped bias mode." @default.
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- W2078265561 date "2008-01-01" @default.
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- W2078265561 title "Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures" @default.
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- W2078265561 doi "https://doi.org/10.1149/1.2844216" @default.
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