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• W2078305310 abstract "Heavily silicon doped GaAs grown by molecular beam epitaxy using a single gallium isotope source (69Ga) has been studied by infrared absorption to reveal localized vibrational modes (LVMs) of Si complexes. The structure observed close to 367 cm−1 is the same as that present in normal GaAs:Si spectra and does not result from mixed Ga isotopes. The electron trap Si–X gives three LVMs at 368.4, 370.0, and 399.6 cm−1, typical of second neighbor donor-acceptor pairs, but inconsistent with a previous proposal that its structure is the planar defect VGa–SiAs–AsGa. It is now suggested that the defect is a perturbed SiGa–VGa center, involving a second Si atom or a second vacancy." @default.
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• W2078305310 date "1997-07-01" @default.
• W2078305310 modified "2023-10-16" @default.
• W2078305310 title "The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs" @default.
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• W2078305310 doi "https://doi.org/10.1063/1.365791" @default.
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