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- W2078312452 abstract "GaN nanowires (NWs) were grown on sapphire by molecular beam epitaxy. NWs form only in the presence of Ni seed particles and only under N-rich conditions. Their length increases linearly with growth time up to about 7.5μm while their diameter remains almost constant. In contrast, a switch to Ga-rich conditions after NW formation results in radial growth, i.e., the NW diameter increases while lengthening is negligible. These results corroborate the fact that the growth of III-V NWs is governed by the accumulation of group-III atoms in the seeds, while group-V species are not preferentially incorporated at the seeds." @default.
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- W2078312452 date "2007-08-27" @default.
- W2078312452 modified "2023-10-14" @default.
- W2078312452 title "Axial and radial growth of Ni-induced GaN nanowires" @default.
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- W2078312452 doi "https://doi.org/10.1063/1.2776979" @default.
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