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• W2078314603 abstract "CuInS 2 quantum dots have been deposited onto mesoporous TiO 2 films on TCO glass substrate via successive ionic layer absorption and reaction process (SILAR) by using three different routes and post-deposition annealing in sulfur ambiance. The influence of the deposition sequence of the In-S and Cu-S on the microstructure of CuInS 2 sensitized TiO 2 electrodes and the photovoltaic performance of the solar cells have been investigated. The microstructure of CuInS 2 sensitized TiO 2 electrodes has been investigated by using X-ray diffraction (XRD), Raman spectra, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) analysis. The optical absorption property of the electrodes has been detected by using UV-Vis spectroscopy, and the photovoltaic performance of CuInS 2 quantum dots sensitized solar cells has been determined by cyclic voltammetry measurement. It has been found that when the Cu-S was deposited prior to In-S, the chalcopyrite phase CuInS 2 could not be observed due to the sublimation of InxS during the annealing under low pressure. A small amount of CuInS 2 has been detected when In-S and Cu-S was deposited alternately onto the TiO 2 films. However, chalcopyrite phase CuInS 2 can be obtained when In-S was deposited prior to Cu-S, and a relative high efficiency of ca. 0.92% (V oc = 0.35V, J sc = 8.49 mA·cm -2 , FF = 0.31) has been achieved via SILAR without KCN treatment and rapid thermal annealing." @default.
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• W2078314603 date "2013-02-01" @default.
• W2078314603 modified "2023-09-25" @default.
• W2078314603 title "Fabrication and Characterization of CuInS₂Sensitized TiO₂Electrodes Based on Improved SILAR Process" @default.
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• W2078314603 doi "https://doi.org/10.4028/www.scientific.net/msf.745-746.478" @default.
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