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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2078315702> ?p ?o ?g. }

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• W2078315702 abstract "We fabricated high-quality strain-relaxed thin SiGe layers by Ar ion implantation into Si substrates before epitaxial growth. The surface of 100-nm-thick Si0.8Ge0.2 layers, the relaxation ratio of which was more than 80%, was found to be very smooth, with a rms roughness of 0.34 nm. Cross-sectional transmission electron microscopy analysis confirmed that strain-relieving dislocations were effectively generated due to the ion-implantation-induced defects and confined in the vicinity of the heterointerface, resulting in a dislocation-free SiGe surface. Moreover, in-plane strain-field fluctuation was found to be largely reduced by this ion implantation method." @default.
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• W2078315702 date "2004-09-27" @default.
• W2078315702 modified "2023-10-16" @default.
• W2078315702 title "Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates" @default.
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• W2078315702 doi "https://doi.org/10.1063/1.1794353" @default.
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