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- W2078342246 abstract "Abstract It is argued that the electrical (in)activity of high-dose implanted group V impurities in silicon (or germanium) is directly connected with the fact that group V atoms can have the valency of five and three, respectively. In the former case, the pentavalent (substitutional) impurity atom is forced by the topological constraint of the host crystal to form a donor which can be electrically active. In the latter case, however, the local disorder due to implantation, introducing a certain structural flexibility in the crystal lattice, makes it possible to incorporate group V impurities in various defect complexes as trivalent atoms which are electrically inactive since all their valence requirements are locally satisfied. It is shown that this interpretation is in agreement with recent experiments." @default.
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- W2078342246 date "1985-09-01" @default.
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- W2078342246 title "On the electrical (in)activity of group V impurities implanted in silicon" @default.
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- W2078342246 doi "https://doi.org/10.1016/0168-583x(85)90054-0" @default.
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