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- W2078363558 abstract "The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that; the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO(2)-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results." @default.
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- W2078363558 date "2009-01-01" @default.
- W2078363558 modified "2023-09-23" @default.
- W2078363558 title "ELDRS and dose-rate dependence of vertical NPN transistor" @default.
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- W2078363558 doi "https://doi.org/10.1088/1674-1137/33/1/010" @default.
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