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• W2078377963 startingPage "8233" @default.
• W2078377963 abstract "The tight-binding molecular dynamics method with hot electrons is used to simulate the laser-induced melting of silicon. The results are in good agreement with previous ab initio simulation and experimental data. Our findings assess the reliability of the tight-binding model to describe silicon with a high concentration of excited electrons. The role of volume changes in the laser-induced melting has also been addressed within constant-pressure tight-binding molecular dynamics." @default.
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• W2078377963 date "2000-03-15" @default.
• W2078377963 modified "2023-09-24" @default.
• W2078377963 title "Laser-induced melting of silicon: A tight-binding molecular dynamics simulation" @default.
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• W2078377963 doi "https://doi.org/10.1103/physrevb.61.8233" @default.
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