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- W2078388758 abstract "Abstract 3 MeV backscattering-channelling analysis, the 16O(d, α)14N nuclear reaction and cross-sectional transmission electron microscopy were used to characterize silicon samples implanted with 2 MeV oxygen ions. The distribution parameters, projected range, longitudinal and transverse stragglings and skewness were determined experimentally for a dose of 1017 O+ cm−2. The lateral straggling was obtained by deconvolution of the oxygen concentration profiles corresponding to oblique incidence implantation. The subcritical dose of 1.5 × 10 18 cm −2 of 2 MeV O+ ions was implanted without external heating during oxygen implantation. It is shown that a temperature of about 200°C resulting from beam heating is sufficient to avoid amorphization. However, in the as-implanted state, the crystal is strongly damaged beyond 1 μm. The implanted samples were subsequently annealed at 1350°C for 4 h in an argon ambient. The annealing process results in the creation of a silicon surface layer 2 μm thick free of SiO2 precipitates. Furthermore, no dislocations were observed within the top silicon layer using cross-sectional transmission electron microscopy. The average residual dislocation density was estimated to be lower than 107 cm−2. Beneath the silicon overlay the implanted and annealed sample contains a discontinuous buried layer of large SiO2 precipitates." @default.
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- W2078388758 date "1989-02-01" @default.
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- W2078388758 title "A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygen" @default.
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- W2078388758 doi "https://doi.org/10.1016/0921-5107(89)90086-x" @default.
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