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• W2078457450 abstract "In this paper, we demonstrate the effect of dc substrate bias on high-rate deposition of microcrystalline silicon (μc-Si) films by using a high-density microwave plasma source. Film depositions are performed at a high silane concentration of 67% (deposition rate of ~ 60 A s−1) with a low substrate temperature of 250 °C. The μc-Si films deposited under appropriate negative dc substrate bias exhibit improved film crystallinity, mass density and reduced defect density along with thinner amorphous silicon incubation layer at the initial growth stage. These can be attributed to the beneficial effect of moderate ion bombardment as well as the less contribution of harmful short-lifetime radicals to film growth." @default.
• W2078457450 created "2016-06-24" @default.
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• W2078457450 date "2006-08-17" @default.
• W2078457450 modified "2023-09-27" @default.
• W2078457450 title "Effect of substrate bias on high-rate synthesis of microcrystalline silicon films using a high-density microwave SiH₄/H₂plasma" @default.
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• W2078457450 doi "https://doi.org/10.1088/0022-3727/39/17/021" @default.
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