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- W2078461979 abstract "Abstract Ge-Si alloy layers have been epitaxially grown throughout the whole range of composition onto Ge substrates by the simultaneous getter sputtering from elemental Ge and Si sources. The epitaxial temperature was 550 to 830° C at growth rates of about 1 μm/h, depending on the Si atomic fraction in the range of 0.05 to 0.88. As the Si content in the alloy increases, the crystallinity of the layer decreases: Si-rich alloy layers contained microtwins. Hall measurements of alloy layers without intentional doping indicated p-type conductivity with Hall mobility of 600 cm 2 /V·sec at carrier concentration of 2 × 10 16 cm -3 for 25 at% Si in the alloy at room temperature. The observed temperature dependence of the hole mobility is indicative of alloy scattering." @default.
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- W2078461979 date "1978-12-01" @default.
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- W2078461979 title "Preparation of Ge-Si epitaxial alloys by sputtering" @default.
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- W2078461979 doi "https://doi.org/10.1016/0022-0248(78)90460-8" @default.
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